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1

A study on in-situ maskless selective epitaxy of GaAs by a low-energy Ga focused ion beam with an As4 molecular beam

Isao Saitoh, Kangsa Pak, Yuichiroh Inoue, Naoki Ohshima, Hiroo Yonezu

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 256 KB

english, 1995

2

In-situ maskless selective area epitaxy of GaAs using a low-energy Ga focused ion beam

Kangsa Pak, Isao Saitoh, Naoki Ohshima, Hiroo Yonezu

Journal:

Journal of Crystal Growth

Année:

1994

Langue:

english

Fichier:

PDF, 404 KB

english, 1994

3

Molecular beam epitaxial growth of high quality GaAs layer directly on GaP substrate

Masayoshi Tsuji, Yasushi Takano, Teiji Torihata, Yasuhiro Kanaya, Kangsa Pak, Hiroo Yonezu

Journal:

Journal of Crystal Growth

Année:

1989

Langue:

english

Fichier:

PDF, 430 KB

english, 1989

4

Carbon doping in GaAs grown by MOVPE with trimethylgallium and triethylarsenic

Kangsa Pak, Kazuaki Ashizuka, Hidetaka Fukazawa, Seiji Yamashita, Yasushi Takano, Hiroo Yonezu

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 276 KB

english, 1990

5

Solid phase epitaxial growth of InP on GaAs

Hiroyuki Maruyama, Kangsa Pak, Kenji Sakakibara, Morio Nakamura, Yasushi Takano, Hiroo Yonezu

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 521 KB

english, 1991

6

Study on initial growth process of Si on InP(100) substrate grown by molecular beam epitaxy

Hiroyuki Maruyama, Kangsa Pak, Kenji Sakakibara, Hiroo Yonezu, Yasushi Takano

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 490 KB

english, 1993

7

Initial growth modes of InP layer grown by molecular beam epitaxy and migration enhanced epitaxy on Si films grown on InP (100) substrates

Hiroyuki Maruyama, Kangsa Pak, Hiroo Yonezu

Journal:

Journal of Crystal Growth

Année:

1994

Langue:

english

Fichier:

PDF, 642 KB

english, 1994

8

Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlattices

Yasufumi Takagi, Hiroo Yonezu, Takahiro Kawai, Keiji Hayashida, Katsuya Samonji, Naoki Ohshima, Kangsa Pak

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 307 KB

english, 1995

9

The substrate orientation dependence of In atom incorporation during the growth of (In,Ga)As on GaAs by molecular-beam epitaxy

Kangsa Pak, Michael R Fahy, Xiao-Mei Zhang, Bruce A Joyce

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 211 KB

english, 1998

10

Initial growth of GaN on sapphire(0001) using an amorphous buffer layer formed at room temperature by RF-MBE

Ohshima, Naoki, Yonezu, Hiroo, Yamahira, Seiji, Pak, Kangsa

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 211 KB

english, 1998

11

Study of the pyrolysis of tertiarybutylhydrazine and GaN film growth

Nishide, Shuichi, Yoshimura, Takashi, Takamatsu, Yukichi, Ichige, Atsushi, Pak, Kangsa, Ohshima, Naoki, Yonezu, Hiroo

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 143 KB

english, 1998

12

An optoelectronic adaptive device and its learning performances

Kohji Kanamori, Kiyotaka Tsuji, Hiroo Yonezu, Kangsa Pak, Yasushi Takano

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

1992

Langue:

english

Fichier:

PDF, 584 KB

english, 1992

13

Vapor-Phase Etching of InP Using Anhydrous HCl and PH[sub 3] Gas

Journal:

Journal of The Electrochemical Society

Année:

1986

Langue:

english

Fichier:

PDF, 844 KB

english, 1986

14

Electrical Properties of Bulk InP Synthesized by Modified Horizontal Bridgman Method

Journal:

Journal of The Electrochemical Society

Année:

1986

Langue:

english

Fichier:

PDF, 535 KB

english, 1986

15

A Study of Heteroepitaxy of InP on GaAs by Metalorganic Vapor-Phase Epitaxy

Journal:

Journal of The Electrochemical Society

Année:

1988

Langue:

english

Fichier:

PDF, 813 KB

english, 1988

16

A novel method of selective epitaxial growth of InP by metalorganic chemical vapor deposition

Wakahara, Akihiro, Pak, Kangsa, Yamada, Hiroyuki, Yoshida, Akira, Nakamura, Testuro

Journal:

Journal of Applied Physics

Année:

1987

Langue:

english

Fichier:

PDF, 598 KB

english, 1987

17

Suppression of Thermal Damage of InP by Adding Ar in H 2 Atmosphere

Pak, Kangsa, Nishinaga, Tatau

Journal:

Japanese Journal of Applied Physics

Année:

1979

Fichier:

PDF, 611 KB

1979

18

Doping Effect of Oxygen on Horizontal Bridgman Grown InP

Pak, Kangsa, Nakano, Tetsuo, Nishinaga, Tatau

Journal:

Japanese Journal of Applied Physics

Année:

1981

Fichier:

PDF, 544 KB

1981

19

Initial Growth Mechanism of GaAs on Si(110)

López, Máximo, Ikei, Takashi, Takano, Yasushi, Pak, Kangsa, Yonezu, Hiroo

Journal:

Japanese Journal of Applied Physics

Année:

1990

Fichier:

PDF, 973 KB

1990

20

Growth Mechanism in Migration-Enhanced Epitaxy of AlAs on Misoriented GaAs(111)B Substrates

Takano, Yasushi, Torihata, Teiji, Kawai, Takahiro, Pak, Kangsa, Yonezu, Hiroo

Journal:

Japanese Journal of Applied Physics

Année:

1990

Fichier:

PDF, 539 KB

1990

21

Heteroepitaxial Growth of InAs on Misoriented GaAs(111)B Substrates by Molecular Beam Epitaxy

Takano, Yasushi, Ikei, Takashi, Hachiya, Yoshiaki, Kishimoto, Yasunori, Pak, Kangsa, Yonezu, Hiroo

Journal:

Japanese Journal of Applied Physics

Année:

1992

Fichier:

PDF, 635 KB

1992

22

Reduction Mechanism of Threading Dislocation Density in GaAs Epilayer Grown on Si Substrate by High-Temperature Annealing

Takagi, Yasufumi, Yonezu, Hiroo, Hachiya, Yoshiaki, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1994

Fichier:

PDF, 1.30 MB

1994

23

Increase of Critical Thickness and Optical Emission Range in $\bf (InAs)_{1}(GaAs)_{\ninmbi n}$ Strained Short-Period Superlattices

Saito, Daishiro, Yonezu, Hiroo, Kawai, Takahiro, Yokozeki, Mikihiro, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1994

Fichier:

PDF, 929 KB

1994

24

Strain Relaxation Process of ( I n A s ) m ( G a A s ) n Strained Short-Period Superlattices Grown by Molecular Beam Epitaxy

Kawai, Takahiro, Yonezu, Hiroo, Saito, Daishiro, Yokozeki, Mikihiro, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1994

Fichier:

PDF, 2.14 MB

1994

25

Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP) 1(GaAs)n Quaternary Strained Short-Period Superlattices Grown on GaAs

Hayashida, Keiji, Takagi, Yasufumi, Samonji, Katsuya, Yonezu, Hiroo, Yokozeki, Mikihiro, Ohshima, Naoki, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1995

Fichier:

PDF, 1017 KB

1995

26

Reduction of Threading Dislocation Density in an ( I n A s ) 1 ( G a A s ) 1 Strained Short-Period Superlattice by Atomic Hydrogen Irradiation

Yokozeki, Mikihiro, Yonezu, Hiroo, Tsuji, Takuto, Ohshima, Naoki, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1996

Fichier:

PDF, 2.06 MB

1996

27

Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam

Nishiyama, Tomokazu, Kim, Eum-Mi, Numata, Kazutoshi, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 90 KB

english, 2004

28

Surface Morphology of LPE Grown InP

Pak, Kangsa, Nishinaga, Tatau, Uchiyama, Susumu

Journal:

Japanese Journal of Applied Physics

Année:

1977

Langue:

english

Fichier:

PDF, 170 KB

english, 1977

29

Two-Dimensional Computer Analysis of Liquid Phase Epitaxy

Pak, Kangsa, Nishinaga, Tatau, Nakamura, Tetsuroh

Journal:

Japanese Journal of Applied Physics

Année:

1979

Fichier:

PDF, 501 KB

1979

30

Initial Growth Mechanism of Si on GaAs Studied by Reflection High-Energy Electron Diffraction Oscillations

López, Máximo, Takano, Yasushi, Pak, Kangsa, Yonezu, Hiroo

Journal:

Japanese Journal of Applied Physics

Année:

1992

Fichier:

PDF, 2.05 MB

1992

31

An Optical Adaptive Device and Its Application to a Competitive Learning Circuit

Tsuji, Kiyotaka, Yonezu, Hiroo, Hosono, Kohji, Shibao, Kazuhiro, Ohshima, Naoki, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1995

Langue:

english

Fichier:

PDF, 487 KB

english, 1995

32

Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence

Nishinaga, Tatau, Sasaoka, Chiaki, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1989

Langue:

english

Fichier:

PDF, 377 KB

english, 1989

33

Observation of Threading Dislocation Generation Process in Highly Lattice-Mismatched Heteroepitaxy

Kawai, Takahiro, Yonezu, Hiroo, Saito, Daishiro, Yokozeki, Mikihiro, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 156 KB

english, 1994